Electronic Engineering Department, The Chinese University of Hong Kong - Prof. J. B. Xu

One of early APL papers by an EE team on surface morphology by AFM (C. C. Hsu, Y. C. Lu, J. B. Xu, I. Wilson, Appl. Phys. Lett. 64, 1959 (1994).) has been cited by a recent Science paper by IBM Research Group on Silicon. The journal is very prestigious in science and technology community. The dislocation defect is one of the most important defects in semiconductor materials and very relevant to device performance. The EE's team work has drawn global attention after its publication. Since then AFM has been widely used for surface quality test in various sectors of information technology industry.

One of two Organometallic Vapor Phase Epitaxy (OMVPE or MOCVD} inventors - Prof. Stringfellow gave a very positive comment and adopted the steps on GaAs observed by AFM as its cover picture of his book - Organometallic Vapor Phase Epitaxy. OMVPE (or MOCVD) is one of the key technologies for semicondcutor manufacturing.

See details: Science, Volume 313, Issue 5791, P.1266 http://www.sciencemag.org/cgi/content/abstract/313/5791/1266?etoc

Anomalous Spiral Motion of Steps near Dislocations on Silicon Surface

1IBM Research Division, T. J. Watson Research Center,
Yorktown Heights, NY 10598, USA. 2Division of Engineering,
Brown University, Providence, RI 02912, USA.
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