B.S., M.S. (University of Minnesota/Minneapolis), Ph.D. (Rice University)
High Frequency, high speed and photonic devices; Organometallic chemical vapor deposition of compound semiconductors
Resume of Career
Kei May Lau received her B.S. and M.S. degrees in physics from the University of Minnesota, Minneapolis, and Ph.D. degree in Electrical Engineering from Rice University in Houston, Texas. After a two-year stint in the industry, she joined the faculty of the Electrical and Computer Engineering Department at the University of Massachusetts/Amherst, where she became a full professor. She joined the regular faculty of Hong Kong University of Science & Technology since the summer of 2000 and established the Photonics Technology Center for devoted efforts in compound semiconductor materials and devices. She is now a Research Professor in the Department of Electronic Engineering at CUHK.
Professor Lau is a Fellow of the IEEE, Optica (formerly OSA), and the Hong Kong Academy of Engineering Sciences. She is also a recipient of the IET J J Thomson medal for Electronics, Optica(OSA) Nick Holonyak Jr. Award, IEEE Photonics Society Aron Kressel Award, US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers (1991) and Hong Kong Croucher Senior Research Fellowship (2008). She was an Editor of the IEEE Transactions on Electron Devices (1996-2002) and Electron Device Letters (2016-2019), an Associate Editor for the Journal of Crystal Growth and Applied Physics Letters. Lau’s research work is focused on the development of monolithic integration of semiconductor devices on industry-standard silicon substrates.
Current Research Activities
- High Frequency, high speed and photonic devices
- Laser Diodes, Integrated Photonics on Silicon
- GaN-based Heterostructure transistors
- Micro-LED micro-displays
- Organometallic chemical vapor deposition of compound semiconductors
- III-nitrides, III-As/P/Sb
- Metamorphic growth – InP on GaAs, III-V on Silicon
- Selective area heteroepitaxy
- Nano-electronics and nano-optoelectronics
Scientific and Professional Societies, Editorship
- Editor, IEEE Electron Device Letters, 2016 - 2019
- Associate Editor, Applied Physics Letters, 2015 - 2017
- Associate Editor, Journal of Crystal Growth, (2005- 2007)
- IEEE Electron Devices Society Educational Activities Committee (2002- 2009)
- IEEE Electron Devices Society Fellows Committee (2013- 2015)
- Editor, IEEE Transactions on Electron Devices (1996- 2002)
- IEEE Electron Devices Society Administrative Committee (2000- 2002)
- AIME/TMS Electronic Materials Committee
- “Enhancement‐Mode III‐N Devices, Circuits, and Methods,” US Patent No. US Patent 7,932,539. Inventors: Jing Chen, Yong Cai, and Kei May Lau, granted (2011)
- “Monolithic Integration of Enhancement‐ and Depletion‐Mode AlGaN/GaN HFETs,” US Patent No. US7,972,915 B2. Inventors: Jing Chen, Yong Cai and Kei May Lau, granted (2011)
- “Low Density Drain HEMTs”; US Patent 8,044,432. Inventors: Jing Chen and Kei May Lau. granted (2011)
- “Method for Manufacturing a Monolithic LED Micro-Display on an Active-Matrix Panel Using Flip-Chip Technology and Display Apparatus Having the Monolithic LED Micro-Display”, US Patent 8,557,616, Inventors: LAU Kei May, KEUNG Chi Wing and LIU Zhao Jun, granted (2013)
- “Monolithic full-color LED micro-display on an active-matrix panel manufactured using flip-chip technology (US Patent 8,642,363), Inventors: LAU Kei May and LIU Zhao Jun, granted (2014)
- “Metamorphic Growth of III V Semiconductor on Silicon Substrate by MOCVD for High Speed III V Transistors”, U.S. Patent No. US9,123,741, Inventors: LAU Kei May, Chak Wah Tang, granted September. (2015).
- “LEDoS Projection System”, US 9,424,775, Inventors: LAU Kei May, YUE Chik and LIU Zhao Jun, granted (2016). https://www.google.com/patents/US9424775B2
- “Power system-on-chip architecture” US Patent 9,560,722 B2, 2017 YUE Chik, Sin, Johnny, and LAU Kei May, granted (2017)
- “Gallium Nitride flip-chip light emitting diode,” US 9,966,519 B2, Inventors: Kei May Lau and Wing Cheung Chong, granted (2018)
- “Monolithic full-color light-emitting-diode display panel,” US 10,943,532 B2, Inventors: Kei May Lau and Xu Zhang, granted (2021)
- B. Shi and K. M. Lau, “Growth of III-V semiconductors and lasers on silicon substrates by MOCVD” in FUTURE DIRECTIONS IN SILICON PHOTONICS, Semiconductors and Semimetal Series, v. 101, p. 229-282, July 2019.
- R. Zhu, H. Jiang, C. W. Tang, and K. M. Lau, “Vertical GaN Trench MOSFETs with Step-graded Channel Doping”, Applied Physics Letters, Vol. 120, Issue 24, 242104, 2022.
- Y. Han, H. Park, J. E. Bowers, and K. M. Lau (invited), “Recent Advances in Light Sources on Silicon,” to appear, Advances in Optics and Photonics, Vol. 14, Iss. 3 pp: 291-570, 2022.
- J. Li, Y. Xue, L. Lin, Z. Xing, K. S. Wong, and K. M. Lau, “Telecom InGaAs/InP quantum well lasers laterally grown on silicon-on-insulator,” IEEE, J. Lightwave Technology, Vol. 40-16, pp. 5631-5635, 2022.
- P. Li, X. Zhang, L. Qi, and K.M. Lau, "Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs", Optics Express, Vol. 30-13, pp.23499-23510, 2022.
- R. Zhu, H. Jiang, C. W. Tang, and K. M. Lau, “Enhancing ON-and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire with Reduced Interface Charges and a Thick Bottom Dielectric”, IEEE Electron Device Letters, Vol. 43, no. 3, pp.346-349, 2022.
- Q. Lin, Y. Xue, W. Luo, J. Huang, L. Lin, and K. M. Lau, “Gain-switching of 1.55 µm InP-based Qdash lasers grown on Si”, AIP Advances, Vol. 12, no. 2, 025315, 2022.
- Z. Yan, Y. Han, L. Lin, Y. Xue, C. Ma, W. K. Ng, K. S. Wong, and K. M. Lau, “A monolithic InP/SOI platform for integrated photonics”, Light: Science & Applications, Vol. 10, no. 200, 2021. (Featured in Eurekalert)
- Y. Xue, Y. Han, Y. Tong, Z. Yan, Y. Wang, Z. Zhang, H. K. Tsang, and K. M. Lau, “High-performance III-V photodetectors on a monolithic InP/SOI platform”, Optica, Vol. 8, no. 9, pp. 1204-1209, 2021. (Featured in Eurekalert)
- W. Luo, L. Lin, J. Huang, Y. Han, and K. M. Lau, “Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon”, Optics Letters, Vol. 46, no. 18, pp.4514-4517, 2021.
- R. Zhu, H. Jiang, C. W. Tang, and K. M. Lau, "Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs," IEEE Electron Device Letters, vol.42-7, pp. 970-973, 2021, doi: 10.1109/LED.2021.3080260.
- L. Lin, Y. Xue, J. Li, W. Luo, J. Huang, and K. M. Lau, " C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon", Optics Letters, vol. 46, no. 12, pp.2836-12839, 2021.
- P. Li, X. Zhang, W. C. Chong, and K.M. Lau, " Monolithic Thin Film Red LED Active-matrix Micro-display by Flip-chip Technology", IEEE Photonics Tech. Lett., Vol. 33-12, pp.603-606, 2021.
- L. Qi, X. Zhang, W. C. Chong, P. Li, and K. M. Lau, "848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production", Optics Express, vol. 29, no. 7, pp.10580-10591, 2021.
- L. Monge-Bartolome, B. Shi, B. Lai, G. Boissier, L. Cerutti, J.-Baptiste Rodriguez, K. M. Lau, and E. Tournié, "GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates", Optics Express, vol. 29, no. 7, pp.11268-11276, 2021.
- Q. Lyu, H. Jiang, and K. M. Lau, "Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform", Optics Express, vol. 29, no. 6, pp.8358-8364, 2021 (Featured as Editor's pick) (Featured in Semiconductor Today).
- H. Jiang, Q. Lyu, R. Zhu, P. Xiang, K. Cheng, and K. M. Lau, "1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current", IEEE Transactions on Electron Devices, vol. 68-2, pp.653-657, 2021.
- Y. Han, Y. Xue, Z. Yan, and K. M. Lau (invited), “Selectively grown III-V Lasers for Integrated Si-Photonics,” IEEE, J. Lightwave Technology, vol.39-4, pp.940-948, 2021.
- H. Jiang, R. Zhu, Q. Lyu, c. W. Tang, and K. M. Lau (invited), “Thin-Barrier Heterostructures Enabled Normally-OFF GaN High Electron Mobility Transistors,” Semicond. Sci. and Technology vol. 36, 034001, 2021.