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The Chinese University of Hong Kong |
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Department of Electronic Engineering & Materials Science and Technology Research Center |
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Refereed Journal Papers (the three digits are the impact factor)
2011
[180] J. An, K. Xue, W. G. Xie, Q. Li, J. B. Xu, Effects of an oxygen environment on the electrical properties of a single CdS nanobelt device, Nanotechnology 22, Art. No. 135702 (2011) (Corresponding Author) (3.14)
[179] Xiaomu Wang, Jian-Bin Xu, Weiguang Xie, and Jun Du, Quantitative Analysis of Graphene Doping by Organic Molecular Charge Transfer, Journal of Physical Chemistry C, (in press) (Corresponding Author) (4.22)
[178] K Xue, L Wang, J An, J. B. Xu, Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope, Nanotechnology 22, Art. No.195705 (2011) (Corresponding Author) (3.14)
[177] Xiaomu Wang, Jian-Bin Xu, Chengliang Wang, Jun Du, Weiguang Xie,High Performance Graphene Devices on SiO2/Si Substrate Modified by Highly-Ordered Self-Assembled Monolayers, Advanced Materials, (in press) (Corresponding Author) (8.38)
[176] Zhixiong Liang, Qin Tang, Jianbin Xu, Qian Miao, Stable N-heteropentacenes with high field-effect mobility, Advanced Materials 23, DOI:10.1002/adma.201004325 (2011) (8.38)
2010
[175] Weiguang Xie, Jianbin Xu, Jin An, and Kun Xue, Correlation between Molecular Packing and Surface Potential at Vanadyl Phthalocyanine/HOPG Interface, J. Phys. Chem. C, 114 (44), pp 19044-19047 (2010) (Corresponding Author) (4.22)
[174] D.X. Xia and J.B. Xu, High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric, J. Phys. D: Appl. Phys. 43, Art. No. 442001,(2010) (Corresponding Author)(2.08)
[173] Xuefeng Wang, Fengqi Song, Qian Chen, Tingyu Wang, Jinlan Wang, Peng Liu, Mingrong Shen, Jianguo Wan, Guanghou Wang and Jian-Bin Xu, Scaling Dopant States in a Semiconducting Nanostructure by Chemically Resolved Electron Energy-Loss Spectroscopy: A Case Study on Co-Doped ZnO, J. Am. Chem. Soc., 132 (18), pp 6492-6497 (2010) (8.58)
[172] Mingdong Wang, Qin Tang, Jin An, Fangyan Xie, Jian Chen, Shizhao Zheng, King Young Wong, Qian Miao, and Jianbin Xu, Performance and Stability Improvement of P3HT:PCBM-Based Solar Cells by Thermally Evaporated Chromium Oxide (CrOx) Interfacial Layer, ACS Appl. Mater. Interfaces, 2 (10), pp 2699-2702 (2010) (Corresponding Author)
[171] Xiaoqing Tian, Jianbin Xu and Weiguang Xie, Controllable Modulation of the Electronic Structure of ZnO(10-10) Surface by Carboxylic Acids, J. Phys. Chem. C, 114 (9), pp 3973-3980 (2010) (Corresponding Author) (4.22)
[170] X. Q. Tian, J. B. Xu and X. M. Wang, Self-Assembly of PTCDA Ultrathin Films on Graphene: Structural Phase Transition and Charge Transfer Saturation, J. Phys. Chem. C, 2010, 114 (49), pp 20917-20924 (2010) (Corresponding Author) (4.22)
[169] Xiaoqing Tian, Jianbin Xu and Xiaomu Wang, Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field, J. Phys. Chem. B, 114 (35), pp 11377-11381 (2010) (Corresponding Author) (3.47)
[168] Qin Tang, Zhixiong Liang, Jing Liu, Jianbin Xu and Qian Miao, N-heteroquinones: quadruple weak hydrogen bonds and n-channel transistors, Chem. Commun., 46, 2977-2979 (2010) (5.50)
[167] Lijia Pan, Hao Qiu, Chunmeng Dou, Yun Li, Lin Pu, Jianbin Xu and Yi Shi, Conducting Polymer Nanostructures: Template Synthesis and Applications in Energy Storage, Int. J. Mol. Sci. , 11(7), 2636-2657 (2010) (1.39)
[166] Zhefeng Li, Jun Du, Qin Tang, Feng Wang, Jian-Bin Xu, Jimmy C. Yu, Qian Miao, Induced Crystallization of Rubrene in Thin-Film Transistors, Advanced Materials Volume 22, Issue 30, pages 3242-3246 (2010) (8.38)
[165] Yun Li, Danfeng Qiu, Liqiang Cao, Chenxu Shao, Lijia Pan, Lin Pu, Jianbin Xu, and Yi Shi, Electrical switching behavior from ultrathin potential barrier of self-assembly molecules tuned by interfacial charge trapping, Appl. Phys. Lett. 96, Art. No. 133303 (2010) (3.55)
[164] C. Y. Chan, J. B. Xu, M. Y. Waye, and H. C. Ong, Angle resolved surface enhanced Raman scattering (SERS) on two-dimensional metallic arrays with different hole sizes, Appl. Phys. Lett. 96, Art. No. 033104 (2010) (3.55)
2009
[163] W. G. Xie, F. Y. Xie, X. L. Yu, K. Xue, J. B. Xu, J. Chen, and R. Zhang, Co doped ZnO(0001)-Zn by diffusion method and its magnetic properties, Appl. Phys. Lett. 95, Art. No. 262506 (2009) (Corresponding Author) (3.55)
[162] L.Wang, P. K.Chu, K.Xue, J. B.Xu, In situ characterization of initial growth of HfO2, Applied Physics Letters, Volume 94, Issue 3, Art. No. 032904 (2009) (3.55)
[161] Z. H. Zhang, Xuefeng Wang, J. B. Xu, S. Muller, C. Ronning, Quan Li, Evidence of intrinsic ferromagnetismin individual dilute magnetic semiconducting nanostructures, Nature Nanotechnology 4, 523-527 (2009) (26.309)
[160] J. Li, J. B. Xu, and H. C. Ong, Hole size dependence of forward emission from organic dyes coated with two-dimensional metallic arrays, Applied Physics Letters Volume 94, Issue 24, Art. No. 241114,(2009) (3.59)
[159] X. D. Ding, J. An, J. B. Xu, C. Li, and R. Y. Zeng, Improving lateral resolution of electrostatic force microscopy by multifrequency method under ambient conditions, Applied Physics Letters 94, Art. No. 223109 (2009) (Corresponding Author) (3.59)
[158] J. Li, H. Iu, D. Y. Lei, J. T. K. Wan, J. B. Xu, H. P. Ho, M. Y. Waye, and H. C. Ong, Dependence of surface plasmon lifetimes on the hole size in two-dimensional metallic arrays, Applied Physics Letters 94, Art. No. 183112 (2009) (3.59)
[157] Qin Tang, Dieqing Zhang, Shenglong Wang, Ning Ke, Jianbin Xu, Jimmy C. Yu, and Qian Miao, A meaningful analogue of pentacene: charge transport, polymorphs, and electronic structure of dihydrodiazapentacene, Chemistry of Materials 21(7), 1400-1405, (2009) (4.88)
[156] J. Gao, Kamal Asadi, Jian Bin Xu, Jin An, Controlling of the surface energy of the gate dielectric in organic field-effect transistors by polymer blend, Applied Physics Letters 94, Art. No. 093302 (2009) (Corresponding Author) (3.59) (highlighted by Noteworthy Chemistry, April 6, ACS)
[155] L. Wang, Paul K. Chu, K. Xue, and J. B. Xu, in situ Characterization of initial growth of HfO2, Applied Physics Letters 94, Art. No. 032904 (2009) (Corresponding Author) (3.59)
2008
[154] B. Liu, R. Zhang, Z. L. Xie, Q. J. Liu, Z. Zhang, Y. Li, X. Q. Xiu, J. Yao, Q. Mei, H. Zhao, P. Han, H. Lu, P. Chen, S. L. Gu, Y. Shi, Y. D. Zheng, W. Y. Cheng, N. Ke, J. B. Xu, Al incorporation, structural and optical properties of AlxGa1-xN (0.13 <= x <= 0.8) alloys grown by MOCVD, Journal of Crystal Growth 310 (21), 4499-4502 (Oct. 15, 2008) (1.96)
[153] X. F. Wang, K. R. Zheng, Z. W. Liu, H. P. Ho, J. B. Xu, S. P. Ringer, Structural, optical and magnetic properties of Co-doped ZnO nanorods with hidden secondary phases, Nanotechnology 19 (45), Art. No. 455702 (2008) (Corresponding Author) (3.31)
[152] W. Zhao, Q. Tang,, H. S. Chan, J. B. Xu, K. Y. Loa and Q. Miao, Transistors from aconjugated macrocycle molecule: field and photo effects, Chemical Communications, 4324-26 (2008) (5.14)
[151] H. Wang, H. P. Ho, J. B. Xu, Photoelectron spectroscopic investigation of nitrogen chemicalstates in ZnO: (N,Ga) thin films, Journal of Applied Physics 103 (10), 103704 (2008) (2.26)
2007
[150] X. J. Yu, J. B. Xu, W. Y. Cheung, and N. Ke, Optimizing the growth of vanadyl-phthalocyanine (VOPc) thin films for high-mobility organic thin-film transistors (OTFTs), Journal of Applied Physics 102 (8), 103711 (2007) (Corresponding Author) (2.26)
[149] K. Xue, J. B. Xu, and H. P. Ho, Nanoscale in-situ investigation of ultrathin silicon oxide thermal decomposition by high temperature scanning tunneling microscopy, Nanotechnology 18, Art. No. 485709 (2007) (Corresponding Author) (3.04)
[148] J. Gao, J. B. Xu, M. Zhu, N. Ke, D. G. Ma, Thickness dependence of mobilityin CuPc thin film on amorphous SiO2 substrate, Journal of Physics D: Applied Physics 40 (18), 5666-5669 (2007) (Corresponding Author) (2.20)
[147] Xuefeng Wang, J. B. Xu, X. J. Yu, K. Xue, J. G. Yu, and X. J. Zhao, Structural evidence of secondary phase segregation from the Raman vibrational modes in Zn1-xCoxO (0<x<0.6), Applied Physics Letters 91, Art.No. 031908 (2007) (Corresponding Author) (3.98)
[146] Xuefeng Wang, J. B. Xu, W. Y. Cheung, Jin An, and Ning Ke, Aggregation-based growth and magnetic properties ofinhomogeneous Cu-doped ZnO nanocrystals, Applied Physics Letters 90, Art.No. 212502 (2007) (Corresponding Author) (4.31)
[145] K. Xue, H. P. Ho, J. B. Xu, and R. Z. Wang, Electron interferometry in the proximity ofamorphous ultrathin SiO2/Si, Applied Physics Letters 90, Art. No. 182108 (2007) (Corresponding Author) (4.31)
[144] D. Y. Lu, J. Chen,J. Zhou, S. Z. Deng, N. S. Xu, and J. B.Xu, Raman spectroscopic study of oxidation and phase transition in W18O49nanowires, Journal of Raman Spectroscopy 38, 176-180 (2007) (2.13)
[143] K. Xue, H. P. Ho, and J. B. Xu, Local study of thickness-dependent electronic properties of ultrathin silicon oxidenear SiO2/Si interface, Journal of Physics D: Applied Physics 40, 2886-2893 (2007) (Corresponding Author) (2.20)
[142] L. Wang, K, Xue, J. B. Xu, A. P. Huang, and P. K. Chu, Effects of plasma immersion ionnitridation on dielectric properties of HfO2, Applied Physics Letters 90, Art. No. 122901 (2007) (Corresponding Author) (4.31)
2006
[141] A. P. Huang, Paul K Chu, L. Wang, W. Y. Cheung, J. B. Xu, and S. P. Wong, FabricationofrutileTiO2thin films by low-temperature, bias-assisted cathodic arc deposition and their dielectric properties, Journal of Materials Research 21(4), 844-850 (2006) (1.92)
[140] Xuefeng Wang, Jianbin Xu, BeiZhang, Huogen Yu, Juan Wang, Xixiang Zhang, Jiaguo Yu,and Quan Li, Signature of Intrinsic High-TemperatureFerromagnetism in Cobalt-Doped Zinc Oxide Nanocrystals, Advanced Materials 18, 2476-2480 (2006) (Corresponding Author) (9.11)
[139] W. H. Ni, J. An, C. W. Lai, H. C. Ong, and J. B. Xu, Emission enhancement frommetallodielectric-capped ZnO films, Journal of Applied Physics 100 (2), Art. No. 026103 (2006) (2.26)
[138] D. Y. Wang, W. L. Li, B. Chu, C. J. Liang, Z. R. Hong, M. T. Li, H. Z. Wei, Q. Xin, J. H. Niu, J. B. Xu, Effect of exciplex formation on organic light emitting diodes based on rare-earth complex, Journal of Applied Physics 100(2), Art. No. 024506 (2006) (2.26)
[137] A. P. Huang, L. Wang, J. B. Xu, and Paul K Chu, Plasma-nitrided high-k polycrystalline nano-array induced by electron irradiation, Nanotechnology 17, 4379-83 (2006) (3.04)
[136] Xuefeng Wang, J. B. Xu, Ning Ke, Jiaguo Yu, Juan Wang, Quan Li, H. C. Ong, and R. Zhang, Imperfect oriented attachment: Direct activation of high-temperature ferromagnetism indiluted magnetic semiconductor nanocrystals, Applied Physics Letters 88, Art. No.223108 (2006) (Corresponding Author) (4.31)
[135] L.Wang, K, Xue, J. B. Xu, A. P. Huang, P. K. Chu, Control of interfacial silicate between HfO2 and Si by high concentration ozone, Applied Physics Letters 88, Art. No. 072903 (2006) (Corresponding Author) (4.31)
[134] S. W. Tsang, S. K. So, and J. B. Xu, Application of admittance spectroscopy to evaluatecarrier mobility in organic charge transport materials, Journal of Applied Physics 99 (1), Art. No. 013706 (2006) (2.26)
2005
[133] M. K. Zhu, W. K. Dai, Y. D. Hou, H. Yan, J. B. Xu, Microstructure control of sputteredBa2TiSi2O8 filmsby sol-gel-derived underlayer, Journal of Crystal Growth 285(1-2), 117-122 (2005) (1.95)
[132] K. Xue, J. B. Xu, L. Xi, J. An, and J. Chen, In situ fabrication and characterization of tungsten nanodots on SiO2/Si via field induced nanocontact with a scanning tunnelling microscope, Nanotechnology 16 No. 12, 2993-3000 (2005) (selected as Feature Article of Nanotechnology and one of the most accessed in Year 2005) (Corresponding Author) (3.32)
[131] Y. H. Yang, C. X. Wang, B. Wang, Z. Y. Li, J. Chen, D. H. Chen, N. S. Xu, G. W. Yang, and J. B. Xu, Radia1ZnO nanowire nucleation on amorphous carbons, Applied Physics Letters 87, Art. No. 183109 (2005) ( 4.31)
[130] J. Chen, K. Xue, J. An, S. W. Tsang, N. Ke, J. B. Xu, Q. Li, and C. R. Wang, Photoelectric effect and electron transport of a single CdS nano-ribbon, Ultramicroscopy 105, 275-280 (2005) (2.22)
[129] M. S. Xu, J. B. Xu, and J. An, Visualization of thermally activated morphology evolution of the N, N’-di(naphthalene-1-yl)-N, N’-diphthalbenzidine films on ITO/copper phthalocyanine underlying layer, Applied Physics A ― Materials and Processing 81 (6), 1151-1156 (2005) (1.86)
[128] K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, H. C. Ong, Electron beam induced light emission and chargeconduction patterning in ZnO by using an AlOx layer, Advanced Materials 17 (16),1960-64 (2005) (9.11)
[127] R. Z. Wang, X. M. Ding, B. Wang, K. Xue, J. B. Xu, H. Yan, and X. Y. Hou, Structural enhancement mechanism of field emission from multilayer semiconductor films, Physical Review B 72, 125310 (2005) (3.17)
[126] M. S. Xu and J. B. Xu, Visualization of thermally-activated degradation pathways of tris(8-hydroxyquinoline) aluminium thin films for electroluminescence application, Thin Solid Films 491 (1-2), 317-322 (2005) (1.69)
[125] A. P. Huang, R. K. Y. Fu, P. K. Chu, L.Wang, W. Y. Cheung, J. B. Xu, S. P. Wong, Plasma nitridation and microstructure of high-k ZrO2 thin films fabricated by cathodic arc deposition, Journal of Crystal Growth 277 (1-4), 422-427 (2005) (1.95)
[124] M. K. Zhu, L. Y. Liu, Y. D. Hou, Y. Hui, J. B. Xu, M. M. Shao, X. Y. Chen, Effects of sputtering pressure on compositions and structures of fresnoite thin films, Physica B ― Condensed Matters 355 (1-4), 100-105 (2005) (0.751)
[123] J. Chen, J. B. Xu, K. Xue, J. An, N. Ke, W. Cao, H. B. Xia, J. Shi, and D. C. Tian, Nanoscale structural characteristics and electron field emission properties of transition metal-fullerene compound TiC60 films, Microelectronics Reliability 45, 137-142 (2005) (1.01)
2004
[122] M. S. Xu, J. B. Xu, H. Z. Chen, and M. Wang, Nanoscale investigation of moisture-induced degradation mechanisms of tris(8hydroxyquinoline)aluminium-based organic light-emitting diodes, J. Phys. D: Appl. Phys. 37(9), 2618-2622 (2004) (2.20)
[121] Wukun Dai, Mankang Zhu, Y. D. Hou, Hao Wang, Hui Yan, Mingming Shao, Xiaoyang Chen and J. B. Xu, Preparation and characterization of Ba2TiSi2O8 ferroelectric films produced by sol-gel method, Materials Letters 58, 2927-2931 (2004) (1.19)
[120] M. S. Xu and J. B. Xu, Nanoscale study on origins of brighter clusters in/on moisture-exposed tris(8-hydroxyquinoline) aluminium thin films, Synthetic Metals 145 (7), 177-182 (2004) (1.28)
[119] M. S. Xu and J. B. Xu, Real-time visualization of thermally activateddegradation of the ITO/CuPC/NPB/Alq3stack used in one of theorganic light-emitting diodes, J. Phys. D: Appl. Phys. 37(6), 1603-1608 (2004) (1.64)
[118] H. L. Kwok and J. B. Xu, Novel molecular device based on electrostatic interactions in organic polymers, Bionanotechnology, IEE Proceedings –Nanobiotechnology 151(2), 48- 52 (2004)
[117] D. Mo, Y. Liu, G. D. Hu, and J. B. Xu, Ellipsometric Spectra and Optical Properties of Anisotropic SrBi2Ta2O9Films, Chinese Physics Letters 21 (2), 266-268 (2004) (1.18)
2003
[116] D. H. Chen, S. P. Wong, W. Y. Cheung, J. B. Xu, Influence of surface morphologyon the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis,Solid State Communications 128(11), 435-439 (2003) (1.60)
[115] K. W. Chen, Y. H. Yu, E. Z. Luo, Z. Xie, J. B. Xu, I. H.Wilson, W. Y. Bishop, D. S. Shen, Characterization of nano-sized Si islands in buried oxide layer of SIMOX by Conducting AFM, Chemical Physics Letters 376 (5-6), 748-752, (2003) (2.44)
[114] M. S. Xu, J. B. Xu, Z. Xie, and E. Z. Luo, Nanoscale investigation on nature of dark hole inmoisture-exposed tris(8-hydroxyquinoline) aluminium thin films, Chemical Physics Letters 374, 656-660 (2003) (2.44)
[113] C. W. Mi, K. Y. Wang, J. B. Xu, S. X. Zhou, Z. J. Liu, and Y. X.Hu, Application of polarization-modulation near-fieldscanning optical microscope, Journal of Chinese Electron Microscopy Society 22(3), 234-36 (2003) (in Chinese)
[112] K. Xue, J. B. Xu, Z. He, M. S. Xu, J. An, and W. Y. Cheung, Study of ultrathin SiO2 films on silicon by scanning tunneling microscopy and spectroscopy, Journal of Chinese Electron Microscopy Society 22 (3), 237-241 (2003) (in Chinese)
[111] J. K. N. Lindner, W. M. Tsang, S. P. Wong, J. B. Xu, I. H. Wilson, XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices, Thin Solid Films 427(1-2), 417-421 (2003) (1.60)
[110] Z. Xie, E. Z. Luo, J. B. Xu, J. An, B. Sundaravel, I. H. Wilson, Z. Y. Wang, X. L. Chen, and L. H. Zhao, Studies of the effects of ion irradiation on ferroelectric domains of Triglycine Sulfate single crystals on a nano-meter scale, Physics Letters A 309, 121-125, (2003) (1.32)
[109] V. A.Gritsenko, H. Wong, W. M. Kwok, and J. B. Xu, Bonding and band offset in N2O-grownoxynitride, J. Vac. Sci. Technol B21(1), 241-245 (2003) (1.60)
2002
[108] M. S. Xu, J. B. Xu, and J. An, Rea-time visualization of morphological evolution of N, N’-di(naphthalene-1-yl)-N, N’-diphthalbenzidine thin films: variable temperature atomic force microscopy study, International Journal of Nanoscience 1 (5-6), 725-729 (2002)
[107] G. D. Hu, T. G. Tang, and J. B. Xu, Tip effects of piezoelectric-mode atomicforce microscope for local piezoelectric measurements of an SrB2iTa2O9thin film, Jpn. J. Appl. Phys. 41, 6793-9681 (2002) (1.17)
[106] G. D. Hu, T. G. Tang, and J. B. Xu, Preparation of (100)-oriented LaNiO3 oxide electrodes for SrBi2Ta2O9-based ferroelectric capacitors, Jpn. J. Appl. Phys. 41, 6877-81 (2002) (1.17)
[105] Z. M. Chen, J. B. Xu, M. S. Altman, and J. N. Wong, Guest Editors of Special Issue on Advances characterization of electronic materials ― Proceedings of the symposium H of the 8th IUMRS International conference on the electronic materials (IUMRS-ICEM2002) ― Xi'an China, June 10-14 2002 ―Preface, International Journal of Modern Physics B 16(28-29), U29-U29 (2002) (0.647)
[104] W. K. Fong, C. F. Zhu, B. H. Leung, C.Surya, B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, Characterizations of GaN films grown with indium surfactant by RF-plasma assistedmolecular beam epitaxy, Microelectronics Reliability 42(8), 1179-1184 (2002) (1.01)
[103] A. K. Das, B. N. Dev, B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature, Pramana-Journal of Physics 59(1), 133-142 (2002) (0.383)
[102] H. Wang, S. P. Wong, W. Y. Cheung, N. Ke, J. B. Xu, W. Q. Li, Study on microstructure and magnetic domain structurein sputtered (Ni66Fe22Co12)xC1-xnanocomposite films, Journal of Materials Science-Materials in Electronics 13(7), 419-424 (2002) (0.635)
[101] H. Y. Guo, J. B. Xu, I. H.Wilson, Z. Xie, E. Z. Luo, S. Hong, and H. Yan, Study of domain stability on (Pb0.78Ca0.24)TiO3thin films using piezo-response microscopy, Appl. Phys. Lett. 81, 715-17 (2002) (3.91)
[100] B. Wang, K. W. Kwok, H. L. W Chan, C. L.Choy, K. Y. Tong, E. Z.Luo, J. B. Xu, I. H. Wilson, Study of polarization switching in PZT films with RuO2 electrodes by conducting atomic force microscopy, Materials Characterization 48, No.2-3,249-253 (2002) (0.932)
[99] R. Venugopal, B. Sundaravel, I. H. Wilson, J. B. Xu, Scaling analysis of Fe-implanted Ge surfaces using atomic force microscopy, Materials Characterization 48, No.2-3, 241-247 (2002) (0.932)
[98] J. Wang, E. Z. Luo, K. H. Wong, H. L. W. Chan, J. B. Xu, I. H. Wilson and C. L. Choy, Ferroelectric domain configuration and piezoelectricresponses in (001)-oriented PMN-PT films, Materials Characterization 48, No.2-3, 215-220 (2002) (0.932)
[97] E. Z. Luo, S. Lin, Z. Xie, J. B. Xu, I. H. Wilson, Y. H. Yu, L. J. Yu and X.Wang, Studying the high-field electron conduction of tetrahedral amorphous carbon thin films by conductingatomic force microscopy, MaterialsCharacterization 48, No.2-3, 205-210 (2002) (0.932)
[96] J. Z. He, J. B. Xu, Z. Xie, M. F.Chiah, N. Ke, W. Y. Cheung, I. H. Wilson, X. L. Ma, Y. H. Tang, N.Wang, C. S. Lee, S. T. Lee, Samplerefinement and manipulation of silicon nanowires ¾ A step towards single wire characterization, Materials Characterization 48 (2-3), 177-181 (2002) (0. 932)
[95] H. Wang, W. Q. Li, S. P. Wong, W. Y.Cheung, N. Ke, J. B. Xu, X. Lu, X. Yan, Magnetic force microscopy study of domain structures in magnetoresistance of (Ni74Fe16Co10)xAg1-x granular films, Materials Characterization 48, No.2-3, 153-58 (2002) (0. 932)
[94] J. B. Xu, Guest Editor of Special Issue of Materials Characterization, Elsevier Science vol. 48, No.2-3, 115-253 (April, 2002), Special Issue - International Union of Materials Research Societies - 6th International Conference in Asia (IUMRS ICA-2000). Symposium E: Scanning probe microscopy for materials characterization. City University of Hong Kong, Hong Kong. Preface (0.932)
[93] M. S. Xu, J. B. Xu, K. Xue, J. An, J. Z. He, and I. H. Wilson, Variable-temperature scanning tunneling microscopy and scanning tunneling spectrscopy study of CuPc, Journal of Nanoscience and Nanotechnology 2 (2), 139-142 (2002) (1.98)
[92] J. Xu, X. H. Huang, W. Li, L. Wang, K. J. Chen, J. B. Xu, I.H. Wilson, Very low threshold electron fieldemission from amorphous carbon films with hydrogen dilution,International Journal of Modern Physics B 16(6-7), 988-992 (2002) (0.598)
[91] B. Sundaravel, I.H. Wilson, E. Z.Luo, J. B. Xu, H. W. Yeung, H. Li, C. F. Yeung, J. R. Sun, H. K. Wong, Resonant Rutherford backscattering spectrometry and channelling studies on the effect of annealing of La0.67Ca0.33MnO3epilayersgrown onSrTiO3(001)substrates using a facing-target sputtering technique, NuclearInstruments&Methods in Physics Research B - Beam Interactions with Materials and Atoms 188, 84-89 (2002) (0.96)
[90] H. L. Kwok and J. B. Xu, A model for exciton formation in organic electroluminescent devices, Solid-State Electronics 46, 645-50 (2002) (0.903)
[89] J. Xu, X. H. Huang, W. Li, K. J. Chen, and J. B. Xu, Stable field emission with low threshold field from amorphous carbon films due to layer-by-layer hydrogen plasma annealing, J. Appl. Phys. 91 (8): 5434-5437 (2002) (2.13)
[88] H. Y. Guo, J. B. Xu, Z. Xie, E. Z. Luo, I. H. Wilson, W. L. Zhong, Ferroelectricrelaxation of (Pb0.76Ca0.24)TiO3thin film, Solid State Communications 121(11), 603-607 (2002) (1.27)
[87] J. Z. He, J. B. Xu, M. S. Xu. Z. Xie, I. H. Wilson, X. L. Ma, Q. Li, N. Wang, L. S. Hung, and S. T. Lee, Dispersion, refinement, and manipulation of single silicon nanowire, Appl. Phys.Lett. 80, 1812-14 (2002) (3.91)
[86] H. Y. Guo, J. B. Xu, I. H. Wilson, Z. Xie, E. Z. Luo, Study of microscopic piezoelectricity of (Pb0.76Ca0.24)TiO3thin films, Phys. Lett. A 294 (3-4), 217-221 (2002) (1.12)
[85] V. A. Gritsenko,R. W. M. Kwok, H. Wong, andJ. B. Xu, Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride, Journal ofNon-crystalline Solids 297(1), 96-101 (2002) (1.27)
[84] M. S. Xu, J. B. Xu, M. Wang, and D. L. Que, Optical and xerographic properties of the phthalocyanine co-deposited composite film and ultrathin multilayered structure, J. Appl. Phys. 91, 748-752 (2002) (2.18)
2001
[83] D. Mo, J. B. Xu, Y. Liu, and G. D. Hu, Ellipsometric study of optical properties of oriented SBT thinfilms, Ferroelectrics 264, 1901-1906 (2001) (0.547)
[82] H. Y. Guo, I. H. Wilson, J. B. Xu, E. Z. Luo, W. Y. Cheung, N. Ke, and B. Sundaral, Aging Effect on the Ferroelectric Property of YMnO3Thin Film, Ferroelectrics 259, 181-185 (2001) (0.547)
[81] E. Z. Luo, S. K. Wong, A. B. Pakhomov, J. B. Xu, I. H. Wilson, and C. Y. Wong, Tunneling current and thickness inhomogeneities of ultrathin aluminium oxide films in magnetic tunnelling junctions, J. Appl. Phys. 90, 5202-07 (2001) (2.18)
[80] Jun Xu, X. H. Huang, W. Li, L. Wang, X. F. Huang, K. J. Chen, J. B. Xu, and I. H. Wilson, Vacuum electron emission with low turn-on electric fieldfrom hydrogenated amorphous carbon thin films, Appl. Phys. Lett. 79 (1), 141-143 (2 2001) (3.91)
[79] Y. M. Fung, W. Y. Cheung, I. H. Wilson, D. H. Chen, J. B. Xu, S. P. Wong, and R. W. M. Kwok, Electron field emission characteristics of textured silicon surface, J Vac Sci Technol B 19 (3), 884-887 (2001) (1.61)
[78] H. Y. Zhang, C. Y. Wu, L. Z. Liang, Y. M. Chen, Y. Y. He, Y. J. Zhu, N Ke, J. B. Xu, S. P.Wong, A.X. Wei, S. Q. Peng, Structural, morphological and optical properties of C60cluster thin films produced by thermal evaporation under argon gas,Journal of Physics - Condensed Matters 13(13), 2883-2889 (2001) (1.61)
[77] Haiyan Zhang, Chunyan Wu, Lizheng Liang, Yanyang He, Yanjuan Zhu, Yiming Chen, Ning Ke, J. B. Xu, S. P. Wong, Aixiang Wei, Shaoqi Peng, Morphology and characteristics of C60thinfilms grown in argon atmosphere by thermal evaporation, J. Vac. Sci.Technol. A 19, 1018 (June 2001) (1.57)
[76] M. S. Xu, J. B. Xu, D. X. Tian, Z. G. Ji, H. Z. Chen, M. Wang, D. L. Que, Alternate heteroepitaxial growth of chloroindium-phthalocyanine and chloroaluminum-phthalocyanine ultrathin multilayered structure andits xerographic and optical properties, Thin Solid Films 384, 109-114 (2001) (1.16)
2000
[75] K. Y. Wang, J. B. Xu, N. Jin, Y. Wang, M. S. Xu, S. X. Zhou, Z. J. Liu, Y. X. Hu, I. H. Wilson, Observationof Ferroelectric Domain by Scanning Near-field Optical Microscopy, Acta Photonica Sinica 29, Z1, 60-63 (2000) (in Chinese)
[74] H. Wang , X. Lu , X. Yan , S. P. Wong, W. Y. Cheung, N. Ke, J. B. Xu, S. J. Hu, D. C. Zeng, Z. Y. Liu, Magnetic domain structures and giant magnetoresistance of granular (Ni74Fe16Co10)(35)Ag-65 films, J. Appl. Phys. 88, 4216-20 (2000) (2.18)
[73] X. Z. Ding, B. K. Tay, X. Shi, M. F. Chiah, W. Y.Cheung, S. P. Wong, J. B. Xu, I. H. Wilson, Magnetic properties of Fe+implanted silica films after post-implantation annealing, J. Appl. Phys. 88 (5), 2745-9 (2000) (2.18)
[72] S. P. Wong, M. F. Chiah, W. Y. Cheung, N. Ke, J. B. Xu, X. X. Zhang, Magnetoresistance properties of ion beam synthesized granular magnetic thin films, Nucl Instrum Meth B169, 166-173 (2000) (0.96)
[71] L. L. Cheng, Y. H. Yu, B. Sundaravel, E. Z. Luo, S. Lin, Y. M. Lei, C. X. Ren, W. Y. Cheung, S. P. Wong, J. B. Xu, I. H. Wilson, Compositional and morphological study of reactive ion beam deposited AlN thin films, Nucl Instrum Meth B 169, 94-97 (2000) (0.96)
[70] Y. H. Yu, Z. Y. Chen, E. Z. Luo, W. Y. Cheung, J. P. Zhao, X. Wang, J. B. Xu, S. P. Wong, I. H. Wilson, Optical and electrical properties of nitrogen incorporated amorphous carbon films, J. of Appl. Phys. 87(6), 2874-2879, (March 15 2000) (2.18)
[69] G. D. Hu, I. H. Wilson, J. B. Xu, S. P. Li, and S. P. Wong, Low-temperature preparation and characterization of SrBi2Ta2O9thin films on (100)-oriented LaNiO3 electrodes, Appl. Phys. Lett. 76(13), 1758-60 (2000) (3.91)
[68] Z. Xie, E. Z. Luo, J. B. Xu, H. B. Peng, B. R. Zhao, G. D.Hu, I. H.Wilson, and L. H. Zhao, Probing local leakage current and ferroelectricity of Pb(Zr0.53,Ti0.47)O3/ YBa2Cu3O7-x heterostrucutures by a modified atomic force microscope, Appl. Phys. Lett. 76(14), 1923-25 (2000) (3.91)
[67] Z. Xie, E. Z. Luo, J. B. Xu, I. H.Wilson, L. H. Zhao, X. X. Zhang, Constructionand Characterization of a heating stage for scanning probe microscope up to 215C°, Review of Scientific Instruments 71(5), 2100-2103 (2000)
[66] E. Z. Luo, A. B. Pakhomov, Z. Q. Zhang, M. C. Chan, I. H. Wilson, J. B.Xu, X. Yan, Conductancedistribution in granular metal films: a combined study by conducting atomicforce microscopy and computer simulation, Physica B 279, 98-101 (2000) (0.751)
[65] D. H. Chen, A. X. Wei, S. P. Wong, J. B. Xu, M. M. Wu, S. Q. Peng, Structural and optical properties ofnitrogen-containing tetrahedral amorphous carbon films, Appl.Physics A ¾ Materials Science & Processing 70, 47-51 (2000)
[64] B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, Patrick Fong, and Charles Surya, Ion channelling studies on mixed phases formed in MOCVD grown GaN on Al2O3(0001), J. Appl. Phys. 87, 955-957 (2000) (1.73)
[63] E. Z. Luo, Z. Xie, J. B. Xu, and I. H. Wilson, In-situ observation of the ferroelectric « paraelectric phase trasition in triglycine sulfate single crystal by a temerpature variable electrostatic force microscopy, Phy. Rev. B 61, 203-206 (2000) (3.17)
1999
[62] K. Wang, X. Wang, N. Jin, W. Huang, J. B. Xu, The height regulation of a near-field scanning optical microscope probe tip, Journal of Microscopy 194, 317-320 (1999) (1.35)
[61] V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, H. Wong, R. W. M. Kwok, J. B. Xu, Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance, Thin Solid Films 353, 20-24 (1999) (1.02)
[60] D. H. Chen, A. X. Wei, S. P. Wong, S. Q. Peng, J. B. Xu, I. H. Wilson, Synthesis and microstructural properties of tetrahedral amorphous carbon films, Journal of Non-crystalline Solids 254, 161-166 (1999) (1.06)
[59] Z. Xie, E. Z. Luo, H. B. Peng, B. R. Zhao, G. D. Hu, I. H. Wilson, J. B. Xu, and L. H. Zhao, Studies of leakage current inhomogeneity of Pb(Zr, Ti)O-3/YBa2Cu3Ox heterostructures on a nanometer scale, Journal of Non-crystalline Solids 254, 112-117 (1999) (1.06)
[58] X. Z. Ding, M. F. Chiah, W. Y. Cheung, S. P. Wong, J. B. Xu, I. H. Wilson, H. M. Wang, L. Z. Chen, X. H. Liu, Aggregation and out diffusion of iron atoms for Fe ion implanted silica films, J. Appl. Phys. 86, 2550-2554 (1999) (1.73)
[57] V. A. Gritsenko, H. Wong, J. B. Xu, R. M. Kwok, I. P. Petrenko, B. A. Zaitsev, Yu. N. Morokov, Yu. N. Novikov, Excess silicon at the silicon nitride/thermal oxide interface in oxide-nitride-oxide Structures, J. Appl. Phys. 86, 3234-40 (1999) (1.73)
[56] G. D. Hu, J. B. Xu, and I. H. Wilson, Domain imaging and local piezoelectric properties of the (200)-predominant SrBi2Ta2O9 thin film, App. Phys. Lett. 75, 1610-12 (1999) (3.35)
[55] D. H. Chen, W. Y. Cheung, S. P. Wong, Y. M. Fung, J. B. Xu, I. H. Wilson, and R. W. M. Kwok, Field emission characteristics of SiC capped Si tip array by ion beam synthesis, J Vac Sci Technol A (Vacuum and Surfaces) 17, 2109-2112 (1999) (1.61)
[54] G. D. Hu, J. B. Xu, I. H. Wilson, W. Y. Cheung, and S. P. Wong, Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition, Appl. Phys. Lett. 74, 3711-13 (1999) (3.35)
[53] G. D. Hu, I. H. Wilson, J. B. Xu, W. Y. Cheung, S. P. Wong, and H. K. Wong, Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method, Appl. Phys. Lett., 74, 1221-3 (1999) (3.35)
[52] W. Wu, X. F. Huang, K. J. Chen, J. B. Xu, X. Gao, J. Xu, W. Li, Room temperature visible electroluminescence in silicon nanostructures,J. Vac. Scien. Technol.A (Vacuum and Surfaces) 17, 159-163(1999) (1.61)
[51] W. H. Choy, R. W. M. Kwok, B. K. L. So, G. K. C. Hui, Y. J. Chen, J. B. Xu, S. P. Wong, W. M. Lau, Surface roughness and oxide contents of gas-phase and solution-phase polysulfide passivation of III-V surfaces, J. Vac. Scien. Technol. A (Vacuum and Surfaces) 17, 93-96 (1999) (1.61)
[50] Z. Y. Chen, Y. H. Yu, J. P. Zhao, S. Q. Yang, T. S. Shi, X. H. Liu, E. Z. Luo, J. B. Xu, I. H. Wilson, Electrical properties of nitrogen incorporated tetrahedral amorphous carbon films, Thin Solid Films 339, 74-77 (1999) (1.02)
[49] V. A. Gritsenko, S. N. Svitasheva, I. P. Petrenko, H. Wong, J. B. Xu, I. H. Wilson, Study of excess silicon at the Si3N4/Thermal SiO2 interface using ellipsometric measurements, J. Electrochemical Society 146, 780-785 (1999) (2.11)
[48] S. P. Wong, M. F. Chiah, W. Y. Cheung, N. Ke, J. B. Xu, Characterization and giant magnetoresistance effect in cobalt-silver granular films formed by MEVVA implantation, Nuclear Instruments & Methods in Physics Research B - Beam Interactions with Materials and Atoms 148, 813-818 (1999) (1.09)
[47] C. S. Lee, I. H. Wilson, W. Y. Cheung, Y. J. Chen, J. B. Xu, S. P. Wong, Ion beam synthesized cobalt germanide alloy by metal vapor vacuum arc implantation, Nuclear Instruments & Methods in Physics Research B - Beam Interactionswith Materials and Atoms 148, 604-609 (1999) (1.09)
1998
[46] Y.J. Chen, I. H. Wilson, J. B. Xu, and Lin Li bin, An STM and AFM study of the effects of1.8 MeV electronbombardment on the surface of graphite, J. of Mat. Sci. 33, 4657-63 (1998) (1.08)
[45] S. Balakumar, J. B. Xu, G. Arunmozhi, R. Jayavel, N.Nakatani, and T. Yamazaki, AFM studies on domainstructure in TGSP single crystals: evidence for the motion of domain walltowards to the negative domain, Jap. J. Appl. Phys. 37, 6177-82 (1998) (1.28)
[44] W. Wu, X. F. Huang, K. J. Chen, J. B. Xu, X. Gao, J. Xu, W. Li, Room temperature visible photoluminescence from crystallized nano-Si thin films, Journal of Non-Crystalline Solids 230 Part B, 1045 - 48 (1998) (1.06)
[43] V. A. Gritsenko, J. B. Xu, R. W. M. Kwok, Y. H. Ng, and I. H. Wilson, Short Range Order and the Nature of Defects and Traps in Amorphous Silicon Oxynitride Governed by the Mott Rule, Physical Review Letters 81, 1054-57 (1998) (6.94)
[42] Z.Y. Chen, Y. H. Yu, J. P. Zhao, X. Wang, S. Q. Yang, T. S. Shi, X. H. Liu, S. P.Wong, I. H. Wilson, J. B. Xu, and E. Z.Luo, Influence of ion energy on the surface morphology of tetrahedral amorphous carbon films, Journal of Materials Science Letters 17, 335-37 (1998) (0.604)
[41] Z. Y. Chen, Y. H. Yu, J. P. Zhao, X. Wang, S. Q. Yang, T. S. Shi, X. H. Liu, S. P.Wong, I. H. Wilson, J. B. Xu, and E. Z.Luo, Optical properties in infra-red region of nitrogen incorporated amorphous carbon films, Diamond and Related Materials 7, 491-94 (1998) (1.50)
[40] Z. Y. Chen, Y. H. Yu, J. P. Zhao, X. Wang, S. Q. Yang, T. S. Shi, X. H. Liu, E. Z. Luo, J. B. Xu, and I. H. Wilson, Surface morphology of nitrogen doped tetrahedral amorphous carbon filmsby AFM, Materials Letter 34,1-4 (1998) (1.63)
[39] E. Z. Luo, I. H. Wilson, J. B. Xu, J. X. Ma, X. Yan, Probing conducting particles buried in an insulatinglayer by conducting AFM, J. Vac. Scien. Technol. B (Microelectronics and Nanometer Structures) B16, 1953-57 (1998) (1.66)
[38] D. H. Chen, S. P. Wong, W. Y. Cheung, W. Wu, E. Z. Luo, J. B. Xu, I. H.Wilson, and R. W. M. Kowk, Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapour vacuum arc ion source, Appl. Phys. Lett. 72,1926-68 (1998) (3.35)
[37] Y. J. Chen, W. Y. Cheung, I. H. Wilson, N. Ke, S. P. Wong, J. B. Xu, H. Sang, and G. Ni, Magnetic domain structures of Co22Ag78granular films observed bymagnetic force microscopy, Appl. Phys.Lett. 72, 2472-74 (1998) (3.35)
[36] E. Z. Luo, I. H. Wilson, X. Yan, and J. B.Xu, Probing electron conduction at microscopic level in percolating nano-composites by conducting atomicforce microscopy, Phys. Rev. B (Rapid Communications) 57, R15120-15123 (1998) (3.17)
[35] W. Wu, D. H. Chen, J. B. Xu, S. P. Wong, W. Y. Cheung, and I. H. Wilson, Atomic force microscopy study of microcrystalline SiC fabricated by ion beam synthesis, J. Vac.Scien.Technol. A16 (Vacuum, Surfaces, and Films), 968-973 (1998) (1.61)
[34] E. Z. Luo, J. B. Xu, W. Wu, I. H. Wilson, B. Zhao, and X. Yan, Indentifying conducting phase from insulating matrixin percolating metal-insulator nano-composites by conducting atomic force microscopy, Appl. Phys. A 66, 1171-1174 (1998) (1.63)
[33] W.Wu, D. H. Chen, W. Y. Cheung,J. B.Xu, S. P. Wong, and I. H. Wilson,A study of crystallineSiClayers fabricated by ion beam synthesis, Appl. Phys. A 66, 539-543 (1998) (1.63)
[32] J. M. Mao, J. B. Xu, Q. C. Peng, S. P. Wong, and I. H. Wilson, Electrical properties of CoSi2precipitates in cobalt implanted silicon - Aconducting atomic force microscopy study, Journal of Materials Science Letters 17, 219-222 (1998) (0.604)
[31] J. M. Mao, I. K. Sou, J. B. Xu, and I. H. Wilson, Electroluminescence from ZnSTe alalloy and investigation of local currentdistribution by conducting atomic force microscopy, J. Vac. Scien. Technol. B16 (Microelectronics and Nanometer Structures), 14-18(1998) (1.66)
1997
[30] Y. J. Chen, I. H. Wilson, C. S. Lee, J. B. Xu, and M. L. Yu, Tip artifacts in atomic force microscope imaging of ion bombarded nanostructures on germanium surfaces, J. Appl. Phys. 82, 5859-61 (1997) (1.73)
[29] Y. J. Chen, W. Y. Cheung, I. H. Wilson, S. P. Wong, and J. B. Xu, A study of ion bombarded nanostructures on germanium surfaces by scanning tunneling microscopy, Thin Solid Films 308-09, 415-19 (1997) (1.02)
[28] E. Z. Luo, I. H. Wilson, J. B. Xu, and J. X. Ma, Resonant conducting in nano-patterning the hydrogen-passivated Si(100) by AFM, Appl. Phys. Lett. 71, 2035-37 (1997) (3.35)
[27] S. Balakumar, J. B. Xu, J. X. Ma, S. Ganesamoorthy, and I. H. Wilson, Surface morphology of ferroelectric domains in BaTiO3 single crystals: An AFM study, Japanese Journal of Applied Physics 36, 5566-69 (1997) (1.28)
[26] Y. J. Chen, I. H. Wilson, W. Y. Cheung, J. B. Xu, and S. P. Wong, Ion Implanted nanostructures on Ge (111) surfaces observed by atomic force microscopy, J. Vac. Scien. Technol. B 15 (Microelectronics and Nanometer Structures), 809-813 (1997) (1.66)
[25] I. H. Wilson, Y. J. Chen, J. B. Xu, Single ion impacts on an In0.22 Ga0.78As/GaAs(100) surface observed by atomic force microscopy, Nuclear Instruments and Methods in Physics Research B 124, 500-505 (1997) (1.09)
[24] K. M. Lui, K. P. Chik, and J. B. Xu, Dendritic crystallization of amorphous germanium by in situ thermal pulse annealing, J. Appl. Phys. 81, 7757-7763 (1997) (1.73)
[23] S. Balakumar, J. B. Xu, I. H. Wilson, G. Arunmozhi, and N. Nakatani, Domain structure investigations of TGSP single crystal: evidence of domain motion with time at room temperature, Japanese Journal of Applied Physics 36, 4377-81 (1997) (1.28)
[22] Y. Wang, Y. N. Sheng, W. K. Ge, J. N. Wang, L. L. Chang, J. Xie, J. X. Ma, and J. B. Xu, Morphology of MBE grown InAs films studied by atomic force microscopy, Journal of Crystal Growth 175/176, 1289-93 (1997) (1.31)
[21] K. M. Lui, K. P. Chik, and J. B. Xu, Epitaxial regrowth of Ge films on (001) GaAs by in situ thermal pulse annealing of evaporated amorphous germanium, Appl. Phys. Lett. 70, 865-867 (1997) (3.35)
1996
[20] I. H. Wilson, Y. J. Chen, J. B. Xu, R. A. B. Devine, and C. Jeynes, Ion impacts and nanostructures on Ge(111), In0.22 Ga0.78As/GaAs(100) and alpha quartz surface observed by atomic force microscopy, Surface and Interface Analysis 24, 881-886 (1996) (1.04)
[19] R. A. B. Devine, D. Mathiot, J. B. Xu, I. H. Wilson, and M. Grauneau, Grain boundary enhanced oxygen out-diffusion in annealed polycrystalline Si/SiO2/crystalline Si, Thin Solid Film 286, 317-320 (1996) (1.02)
[18] E. Z. Luo, J. X. Ma, J. B. Xu, I. H. Wilson, A. B. Pakhomov, and X. Yan, Probing the conducting paths in a metal-insulator composite by conducting atomic force microscopy, Journal of Physics D (Applied Physics) 29, 3169-72 (1996) (2.22)
[17] C. C. Hsu, J. B. Xu, and I. H. Wilson, Surface morphology of metalorganic vapor phase epitaxy grown InAs and InGaAs observed by atomic force microscopy, J. Vac. Scien. Technol. B (Microelectronics and Nanometer Structures) 14, 1105-1108 (1996) (1.66)
[16] X. T. Zeng, K. H. Wong, and J. B. Xu, Epitaxial film of La-Ca-Mn-O with magnetoresistance prepared by FTS, Science in China (Series A) 26, 55-59 (1996) (in Chinese)
[15] I. H. Wilson, J. B. Xu, R. A. B. Devine and R. Webb, Energetic ion impacts on quartz surfaces: a study by atomic force microscopy and computer simulation, Nuclear Instruments and Methods in Physics Research B 118, 473-477 (1996) (1.09)
1995
[14] X. T. Zeng, H. K. Wong, J. B. Xu, and I. H. Wilson, Step flow growth of (La, Ca) MnOd thin film on (110) NdGaO3, Appl. Phys. Lett. 67, 3272-3274 (1995) (3.35)
[13] C. C. Hsu, J. B. Xu, I. H. Wilson, and S. M. Wong, Surface morphology of metalorganic vapour phase epitaxy grown strained-layer Ga1-xInxAs onGaAsobserved by atomic force microscopy, Appl.Phys.Lett. 66, 604-606 (1995) (3.35)
[12] R. A. B. Devine, W. L. Warren, J. B. Xu, I. H. Wilson, P. Paillet, and J-L. Leray, Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures, J. Appl. Phys. 77, 175-186 (1995) (1.73)
1994
[11] C. C. Hsu, J. B. Xu, I. H. Wilson, T. G. Andersson, and J. V. Thordson, Spiral growth of GaAs by molecular beam epitaxy, Appl. Phys.Lett.65, 1552-1554 (1994) (3.35)
[10] C. C. Hsu, J. B. Xu, and I. H. Wilson, Spiral growth of InP by metalorganic vapour phase epitaxy, Appl. Phys.Lett. 65, 1394-1396 (1994) (3.35)
[9] J. B. Xu, K. Laeuger, R. Moller, K. Dransfeld, and I. H. Wilson, Heat transfer between two metallic surfaces at small distances, J. Appl. Phys. 76, 7209-7216 (1994) (1.73)
[8] J. B. Xu, K. Laeuger, K. Dransfeld, and I. H.Wilson, Thermal sensors for investigation ofheat transfer in scanning probe microscopies, Rev. Sci. Instruments 65, 2262-2266 (1994) (1.38)
[7] J. B. Xu, K. Laeuger, R. Moller, K. Dransfeld, and I. H. Wilson, Energy exchange processes by tunnelling electrons, Applied Physics A59,155-161 (1994) (1.86)
[6] J. B. Xu, B. Koslowski, R.Moller, K. Laeuger, K. Dransfeld, and I. H. Wilson, Proposal to study the thermopower produced by a vacuum-tunneling junction, J. Vac. Sci. Technol. B (Microelectronics and Nanometer Structures) 12,2156-2160 (1994) (1.66)
[5] C.C. Hsu, Y. Lu, J. B. Xu, T. K. S. Wong, and I. H. Wilson, Spiralgrowth of GaAs by metal organic vapour phase epitaxy, J. Vac. Sci. Technol. B (Microelectronics and Nanometer Structures) 12, 2115-2117 (1994) (1.66)
[4] C. C. Hsu, J. B. Xu, and I. H. Wilson, Growth mechanism of GaAs by metal organic vapor phase epitaxy, Appl. Phys. Lett. 64, 2105-2107 (1994) (3.35)
[3] C. C. Hsu, Y. Lu, J. B. Xu, I. H. Wilson, Spiral growth of GaAs by metal organic vapour phase epitaxy, Appl. Phys.Lett. 64, 1959-1961 (1994) (3.35)
1988
[2] K. Dransfeld, and J. Xu, The heat transfer between a heated tip and a substrate: fast thermal microscopy, Journal of Microscopy, Vol. 152, Pt 1, 35-42 (1988) (1.56)
[1] W. Q. Wu, J. Xu, S. Zhang, Leaky SAW and other acoustic modes on the substrate of 49 degree Y - X LiNbO3, Chinese Physics Letter, Vol. 5, No.1, 21-24 (1988) (0.812)
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